symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 32 45 62 75 r q jl 18 24 w junction and storage temperature range a p d c 2.8 1.8 -55 to 150 t a =70c i d continuous drain current af maximum units parameter t a =25c t a =70c 30 maximum junction-to-ambient a steady-state 16 13 120 avalanche current g 30 c/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current b power dissipation t a =25c gate-source voltage drain-source voltage maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w a repetitive avalanche energy l=0.3mh g 135 mj AO4490 30v n-channel mosfet product summary v ds (v) = 30v i d = 16a (v gs = 10v) r ds(on) < 7.2m w (v gs = 10v) r ds(on) < 10m w (v gs = 4.5v) esd protected 100% uis tested 100% rg tested general description the AO4490 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 4.5v, while retaining a 20v v gs(max) rating. it is esd protected. this device is suitable for use as a load switch an d general purpose applications. soic-8 top view bottom view d d d d s s s g g ds alpha & omega semiconductor, ltd. www.aosmd.com
AO4490 symbol min typ max units bv dss 30 37 v 1 t j =55c 5 i gss 10 m a v gs(th) 1.4 1.8 2.5 v i d(on) 120 a 6 7.2 t j =125c 8.5 10 8 10 m w g fs 55 s v sd 0.70 1.0 v i s 4 a c iss 1803 2170 pf c oss 387 pf c rss 238 pf r g 1.3 2 w q g (10v) 36 48 nc q g (4.5v) 19 nc q gs 3.9 nc q gd 8.7 nc t d(on) 7.6 ns t r 6.4 ns t d(off) 27 ns t f 8.5 ns t rr 27 33 ns q rr 17 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =15v, i d =16a turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1 w , r gen =3 w turn-off fall time turn-on delaytime m w v gs =4.5v, i d =12a i s =1a,v gs =0v v ds =5v, i d =16a maximum body-diode continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss m a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 16v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =16a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =16a reverse transfer capacitance i f =16a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. ear and iar ratings are based on low frequency a nd duty cycles such that tj(start)=25c for each pul se. rev 4 : nov. 20 10 alpha & omega semiconductor, ltd. www.aosmd.com
AO4490 typical electrical and thermal characteristics 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) -40c 2.0 4.0 6.0 8.0 10.0 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -60 -30 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =16a v gs =4.5v i d =12a 0 5 10 15 20 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =16 25c 125c 0 30 60 90 120 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4.5v v gs =3.5v 6v 3v 4v 5v alpha & omega semiconductor, ltd. www.aosmd.com
AO4490 typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q qq q ja normalized transient thermal resistance c oss c rss 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m 10ms 1ms 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =16a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
AO4490 typical electrical and thermal characteristics 0 1 2 3 0 25 50 75 100 125 150 175 t ambient (c) figure 12: power de-rating (note a) power dissipation (w) t a =steady-state t a =10s alpha & omega semiconductor, ltd. www.aosmd.com
AO4490 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com
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